Precision measurement of the quantized anomalous Hall resistance at zero magnetic field

In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed using standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without the external magnetic field. For the deviation of the quantized anomalous Hall resistance from RK, we determined a value of 0.17 ± 0.25 ppm, the smallest and most precise value reported to date. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future.In the quantum anomalous Hall effect, the edge states of a ferromagnetically doped topological insulator exhibit quantized Hall resistance and dissipationless transport at zero magnetic field. Up to now, however, the resistance was experimentally assessed using standard transport measurement techniques which are difficult to trace to the von-Klitzing constant RK with high precision. Here, we present a metrologically comprehensive measurement, including a full uncertainty budget, of the resistance quantization of V-doped (Bi,Sb)2Te3 devices without the external magnetic field. For the deviation of the quantized anomalous Hall resistance from RK, we determined a value of 0.17 ± 0.25 ppm, the smallest and most precise value reported to date. This is a step towards realization of a practical zero-field quantum resistance standard which in combination with the Josephson effect could provide the universal quantum units standard in the future.