Improved Fitting Of the Spin Polarized Tunneling Conductance Near the Metal‐Insulator Transition

We have determined the spin‐polarized (SP) density of states (DOS) of 3‐dimensional amorphous (a‐) GdxSi1−x in the quantum critical regime (QCR) of a magnetic field tunable metal‐insulator transition (MIT) by measuring the SP tunneling conductance of an Al/Al2O3/a‐GdxSi1−x planar tunnel junction at T=25mK and H⩽3.0T. A SP Abrikosov‐Gorkov (AG) DOS has been used to fit the data leading to a significant improvement over prior attempts to use a SP Bardeen‐Cooper‐Schrieffer (BCS) DOS. We find a large polarization near the MIT of a‐GdxSi1−x (x=0.14).