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Influence of MOCVD reactor environment on AlGaN/GaN HEMT growth on Si
Influence of MOCVD reactor environment on AlGaN/GaN HEMT growth on Si
2018
Yuya Yamaoka
Akinori Ubukata
Yoshiki Yano
Toshiya Tabuchi
Koh Matsumoto
Takashi Egawa
Keywords:
Metalorganic vapour phase epitaxy
Analytical chemistry
High-electron-mobility transistor
Materials science
algan gan
Optoelectronics
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