Kinetics of reactive diffusion between Au and Sn during annealing at solid-state temperatures
2005
Abstract The reactive diffusion between Au and Sn was experimentally studied at solid-state temperatures using Sn/Au/Sn diffusion couples prepared by a diffusion bonding technique. The diffusion couples were annealed at temperatures of T = 393 and 473 K for various times in an oil bath with silicone oil. After annealing, compound layers composed of AuSn 4 , AuSn 2 and AuSn were recognized to form at the Au/Sn interface. The thickness of the AuSn 4 layer is about six and four times greater than those of the AuSn 2 and AuSn layers at T = 393 and 473 K, respectively. The ratio of the thicknesses of the compound layers is kept constant independently of the annealing time. The total thickness l of the compound layers is described as a function of the annealing time t by the equation l = k ( t / t 0 ) n , where t 0 is unit time, 1 s. The exponent n is nearly equal to 1/2 at T = 393 K but takes a value between 1/4 and 1/2 at T = 473 K. Such an intermediate value of n at T = 473 K indicates that the grain boundary diffusion contributes to the reactive diffusion and the grain growth occurs at certain rates. As the annealing temperature decreases, the contribution of the grain boundary diffusion should become more remarkable, but the grain growth will slow down. Consequently, n becomes close to 1/2 at T = 393 K. According to the constancy of the ratio of the thicknesses, it is concluded that the same rate-controlling process works in the AuSn 4 , AuSn 2 and AuSn layers at a constant annealing temperature.
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