Фотолюминесценция самоформирующихся нанокластеров GeSi/Si, выращенных методом сублимационной молекулярно-лучевой эпитаксии в среде Германа

We study the dependence of photoluminescence spectra of heterostructures with GeSi/Si nanoclusters, tained by sublimation molecular-beam epitaxy in the germanе atmosphere, on the nominal thickness dGe of the deposited Ge layer in the transition region from layered growth to three-dimensional nucleation. It is found that the photoluminescence spectrum for dGe dGe > 5 monolayers. We study the temperature dependence of photoluminescence of heterostructures with self-formed GeSi/Si nanoclusters in the temperature range 8-300 К. It is found that the intensity of photoluminescence from both GeSi nanoclusters and the wetting Ge layer is maximum at 8 K and decreases with increasing temperature.