Modeling Atomistic Ion-Implantation and Diffusion for Simulating Intrinsic Fluctuation in MOSFETs arising from Line-Edge Roughness

We have developed new simulation tools to enable more precise design of sub-100nm MOSFETs. Intrinsic fluctuations in the characteristics of these devices occur as part of their statistical nature. Our three-dimensional atomistic approach to both process and device simulations enabled us to examine the coupling effects of the most significant sources of fluctuation, i.e. line-edge-roughness and random discrete dopants, considering practical fabrication processes.