A Fast and Accurate SiC MOSFET Compact Model for Virtual Prototyping of Power Electronic Circuits

Power semiconductor compact models assist engineers throughout the development process of power electronic circuits by predicting and verifying the behavior of fast switching SiC MOSFETs in a virtual prototyping environment. This paper discusses a SPICE-based simulation model for the 1200-V, 45-mOmega CoolSiCTM SiC MOSFET that is both accurate and, owing to its compact structure, fast and robust in convergence. This enables, besides traditional double-pulse, also multi-pulse simulations of entire power circuits at the system level. A thorough comparison between simulation and measurement data shows a very good agreement over a wide range of parameter variations in both static and dynamic behavior.