Joining Mechanism of Field-assisted Bonding of Electrolyte Glass to Silicon
2001
The microstructure and element distribution near interface of electrolyte glass silicon joining was investigated. The influence of technological parameters on joining process was studied. The joining mechanism was found to be the formation of oxide layer due to the migration and diffusion of ions. It was also found that the columnar microstructure in transitional layer is favorable to the strength of joins.
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