Field Emission Characteristics of Thin MPCVD Diamond Films

A renewed interest about vacuum microelectronics based on “cold cathode”-devices as a promising alternative to the solid state microelectronics has been rapidly developed. Due to its unique combination of chemical and physical properties, such as a wide bandgap, negative electron affinity, high breakdown fields and chemical inertness diamond has been suggested as a suitable material for field emission (FE) applications (FED and similar devices). Diamond films used as a field emitters demonstrate a low onset electrical field strength, E on (3–40 V/Eim) and a stable electron emission. The field emission correlates strongly with the crystal structure, as well as with the phase purity of diamond films [1, 2].