In-situ transmission electron microscopy studies of the crystallization of N-doped Ge-rich GeSbTe materials

We have studied by electron microscopy and x-ray diffraction techniques the amorphous-to-crystalline phase transition which occurs during annealing of a highly Ge-rich and N-doped amorphous GeSbTe material. The crystallization onset occurs at 380 °C with the diffusion and segregation of Ge followed by the formation of Ge nanocrystals. The GeSbTe face-centered cubic (FCC) crystalline phase only appears at 400 °C. Phase separation occurs because the Ge concentration is well above what can be accommodated by the Ge2Sb2Te5 lattice. The possible formation of a two-phase material should be considered in order to simulate device characteristics and optimize material composition for electronic memory applications.