Semiconductor light emission/detection device and its manufacture

PURPOSE: To provide a semiconductor light emission/detection device which realizes the optical interconnection in a silicon base semiconductor device. CONSTITUTION: A semiconductor light emission/detection device comprises the first doped silicon layer 10, the first intrinsic silicon epitaxial layer 15 formed on the layer 10, at least one quantum dot 20 buried in the intrinsic silicon epitaxial layer 15 and the second doped silicon layer 30 formed on the second intrinsic silicon epitaxial layer 25.