Deposition of YBa2Cu3O7−x films on Si with conductive indium oxide as a buffer layer

Abstract The superconducting YBa 2 Cu 3 O 7− x (YBCO) thin films have been grown in in situ on Si with a conductive indium oxide (In 2 O 3 ) buffer layer. The buffer layer, sputtered by the reactive dc magnetron method, was used to minimize interdiffusion between Si and the superconductor. The as-deposited thin films, without post high-temperature annealing, has a T c onset at 98 K with zero resistance at 81 K, X-ray diffraction data indicate that the films have a preferential c -axis oriented structure. Auger electron spectroscopy (AES) and Rutherford back scattering (RBS) have been employed to study the diffusion and structure variation near interfaces.