Deposition of Copper Dots from Chemical Vapor Deposition with [ Cu ( I ) ( hfac ) ] 2 ( DVTMSO ) and [ Cu ( I ) ( hfac ) ] 2 ( HD )

Two copper(I) complexes with organic ligands, [Cu I (hfac)] 2 (DVTMSO) and [Cu I (hfac)] 2 (HD) (hfac=hexafluoroacetylacetonate, DVTMSO=1,2-divinyltetramethyl-disiloxane, HD=1,5-hexadiene), were synthesized and used for copper metallorganic chemical vapor deposition. In these compounds, two Cu(hfac) fragments are bonded by one neutral ligand forming unusual structure with respect to other Cu(I) complexes. The compounds exhibited relatively high volatility and stability when compared to other copper(I) precursors. By using the reported compounds as precursors, a continuous Cu layer was not formed but the Cu islands were only observed. Also, the shape and size of Cu islands are significantly changed as a function of the substrate temperature.