76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels

We have fabricated top-gate field-effect transistors (FETs) based on an oxide semiconductor for high-performance driving capability. The optimization of the plasma treatment enabled a 50-nm-thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.