Enhancement of quantum efficiency of narrow gap semiconduc tors infra-red emission
2001
It was shown, that the uniaxial compression leads to the increase of Auger lifetimes in the narrow gap semiconductors, and to the decrease of the radiative band to band lifetimes. The quantum efficiency can be increased up to 1 on the base of this effect. Experimental results are obtained for InSb and HgCdTe.
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