Assisted MRAM with NAND Structured Cell

The stacked type thermally assisted MRAM with NAND structured cell which has the features of high speed operation competitive DRAM, non-volatility, and lower bit cost than NAND flash memory has been newly proposed. By using thermally assisted writing scheme, small memory cell size of 5F 2 and small power consumption during write operation can be realized. Newly proposed scheme with 39nm design rule leads to small chip area of about 70% compared with that of conventional scheme without sacrificing the high speed performance competitive DRAM. Furthermore, write current for memory cell during write operation with newly proposed scheme can be reduced to 1.1% of that of the conventional scheme. This leads to smaller power consumption and smaller chip area and lower bit cost by using the miniaturized design rule such as 22-32nm.