First principles calculation of resistive random access memory based on multi-layer 2H phase molybdenum disulfide resistive layer

In this work, Ag/ MoS 2 / Ti RRAM are studied by first principles calculations. First of all, metal/ MoS 2 interfaces are proposed. Then, the set process of Ag/ MoS 2 / Ti device was simulated by molecular dynamics and the IV curve was calculated, which confirmed the switching characteristics. The switching ratio is over than 102. This proves that the mechanism of Ag/ MoS 2 (2H phase)/ Ti RRAM is conductive filament mechanism, and there is a great potential to improve the switching ratio and other properties. The work of this paper has guiding significance for the design and optimization of Ag/ MoS 2 / Ti RRAM.