GaInNAs/GaAs MQW pin photodetector for the 1.3 μm optical communications window

We present the temporal response characteristic of a dilute nitride based (GaInNAs/GaAs) p-i-n multiple quantum well (MQW) device for operation as fast photodetector in the 885 to 1127 nm wavelength region. The temperature dependence of the transient photoconductivity (TPC) at different bias voltages and excitation intensity are reported. We measured the PC rise and fall times by the use of a 1064 nm pulsed Nd-YAG laser as the excitation source. The pulsewidth is 100 ps and the repetition rate 5 Hz. The TPC rise time was of about 2 ns at T=100 K, increasing to 4 ns at room temperature. The PC decay curve had two time constants, with a fast decay time of 5 ns, followed by a slower component of about 200 ns at T=300 K