Impact of heavy-ion irradiation on gate oxide reliability of silicon carbide power MOSFET
2021
SiC power MOSFETs were exposed to 79Br, 64Cu, and 47Ti ions with different biases. After irradiation, the static parameters of the device did not change significantly. The oxide reliability is also...
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
19
References
0
Citations
NaN
KQI