Novel method for dry etching CH 3 NH 3 PbI 3 perovskite films utilizing atmospheric-hydrogen-plasma

Patterning of organic-inorganic hybrid methyl ammonium lead iodide (CH 3 NH 3 PbI 3 ) perovskite films by atmospheric hydrogen plasma is explored. It is estimated that among oxygen, nitrogen, and hydrogen plasmas only the hydrogen plasma treatment is capable to etch perovskite film. A rectangular metal mask is placed to a perovskite film to form a mesa structure. The morphology of treated film is dramatically changed from metal mask to outward direction. In the patterned area eight regions are observed possessing different morphologies. The microstructures and compositions of the plasma-processed semiconducting films are analyzed in each region.