Two step rapid thermal boron diffusion making micro resistor

In order to provide the heating element of microelectromechanical systems' (MEMs') thermal driving system, a kind of silicon substrate micro resistor was designed and produced. Two steps rapid thermal boron diffusion (RTBD) from borosilicate glass (BSG) was adopted to fabricate micro resistor. Boron doping was chosen to increase the heater’s temperature resistance coefficient within tolerable noise limits. The model of the Boron ion spread in wafer was analyzed by numerical simulation and the micro resistor fabrication conditions were optimized. The conventional serpentine design of the resistor provided better temperature control and better temperature uniformity. A wide range of temperature from ambient temperature to (200℃) could be obtained. The resistor performance indicated that the diffusion regions were extremely shallow and highly doped. The measured effective junction depth and sheet resistances of the resistor show good agreement with theoretical calculations.