Influence of Mg and Si on the Oxidation of Aluminum
1998
Test materials of pure Al, Al alloyed with 10,50, and 190 ppm Mg, and Al alloyed with 10 ppm Mg + 500ppm Si were oxidized at temperatures ranging from 250 to620°C. The composition and thickness of the oxide film were determined by electronspectroscopy for chemical analysis (ESCA) and Augerspectroscopy. Below the crystallization temperature(400°C) of Al2O3,Mg2+ is enriched in the interior portion of the oxide. The enrichment of Mg2+gives a somewhat thinner oxide compared with the oxideformed on pure Al. Above 400°C, MgO is formed as aseparate phase on the surface of theAl2O3. The Si-containing material showed Si4+ enrichment inthe surface oxide. Mg2+ species were notdetectable. Silicon is also strongly enriched in themetal phase just below the metal-oxideinterface.
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