A new conduction model for polycrystalline silicon films

A new quantitative electrical model is introduced to solve earlier modeling inadequacies in polycrystalline silicon films. An analytical J-V expression is developed in normalized closed form, which includes the thermionic field emission through a space-charge potential barrier and through a grain-boundary scattering potential barrier and the thermionic emission over these barriers. The modeling validity has been verified experimentally for films with grain sizes of 230 to 1220 A, doping concentrations from 1 × 10 16 to 8 × 10 19 cm -3 and over a temperature range from -176° to 144°C.