The method for producing single crystal silicon

Object of the present invention is to develop a method for producing single crystal silicon by a carbon-containing crystal defects is suppressed, using this method, carbon is easily mixed into the silicon melt, the melting. Silicon single crystal production method of the present invention is housed in the crucible from a silicon melt in a silicon single crystal while pulling it to grow a silicon single crystal manufacturing method thereof using a Siemens use polycrystalline silicon rods create SYSTEM is located near the end of the rod holding portions of the contact between the carbon member and the core wire was broken, as at least a portion of the silicon feedstock.