A method of embedding a sigma-shaped semiconductor alloy in transistors by applying a uniform oxide layer prior to etching the recesses

A method comprising: Forming an oxide layer on exposed surface portions of an active region on the basis of a predefined desired thickness of the oxide layer, wherein the active region formed thereon a gate electrode structure having before the formation of the oxide layer, the oxide layer is formed by determining an initial thickness of an oxide material on the exposed surface regions is formed, and controlling an oxidation process using the initial thickness and the predefined target thickness as a control parameter; Executing a sequence of wet-chemical etching such that the oxide layer is removed and a recess is generated in the active region; Forming a semiconductor material in the recess; and Forming drain and source regions in the active region.