Surface states induced high P-type conductivity in nanostructured thin film composed of Ge nanocrystals in SiO2 matrix

2010 
Highly conductive thin films composed of Ge nanocrystals (Ge-NCs) embedded in SiO2 matrix were prepared using a low thermal budget process. P-type behavior in the undoped films was attributed to the hole accumulation caused by acceptor-like surface states. Quantitative analysis has demonstrated that the density of surface states was sufficient to cause the measured electrical conductivity. The charge transport mechanism was identified as thermally activated charge hopping from one NC to its nearest neighbor. Postgrowth rapid thermal annealing dramatically increased the conductivities and this was tentatively explained by the modification of Ge-NCs’ surface structure and reduction in defects in SiO2 matrix.
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