Proton irradiated MBE grown GaInP/GaAs single junction and tandem solar cells

Degradation characteristics for MBE grown Ga/sub 0.51/In/sub 0.49/P and GaAs single junction and Ga/sub 0.51/In/sub 0.49/P/GaAs tandem solar cells irradiated with 3 MeV and 10 MeV protons with fluences of 10/sup 10/- 10/sup 13/ cm/sup -2/ are reported. The cell degradation was characterized with illuminated current-voltage (I-V) and spectral response measurements. Minority carrier diffusion length damage coefficients for the GaAs cells for 3 MeV and 10 MeV protons were calculated as a function of fluence. The results were compared to the InP damage coefficients. In addition, photo-annealing recovery effect at temperatures of 35-60/spl deg/C under 1-Sun AM0 illumination on the Ga/sub 0.51/In/sub 0.49/P cells are presented.