Designing the relative impact of thickness/composition changes in selective area organometallic epitaxy for monolithic integration applications

Selective area growth (SAG) has been performed with atmospheric pressure MOVPE. We have studied growth rate enhancement and composition variation as a function of the mask and opening widths. Two distinct behaviours, depending on the opening width, have been identified. For opening regions larger than 5 /spl mu/m, an overgrowth occurs near the edge of the mask and the relative variation of III elements in the centre is small and independent of the mask width. On the other hand for narrow opening regions (<3 /spl mu/m) the growth has a triangular shape with smooth [111] facets. In that case the relative variation of III elements in the centre increases linearly with the mask width. Moreover we have grown a multiquantum well structure laser in a 2 /spl mu/m opening region (6 lattice matched InGaAsP wells and barriers at 1.55 /spl mu/m and 1.2 /spl mu/m respectively). Good material quality and lasers characteristics have been obtained.