UV-NIL based nanostructuring of aluminum using a novel organic imprint resist demonstrated for 100nm half-pitch wire grid polarizer

In this work we present a UV-Nanoimprint (NIL) process flow based on the combination of a novel fully organic imprint resist and a hybrid stamp for high resolution patterning and low-defect imprinting in the sub-100nm regime. The advantages of this combination are on the one hand the facile removal of the fully organic imprint resist mr-NIL210 with an oxygen plasma even after RIE etching, which makes this imprint resist highly attractive for the structuring of metal films by nanoimprint. On the other hand the resist was specially designed for the use in combination with Polydimethylsiloxane (PDMS) stamps, its negligible propensity to permeate into the stamp material under contact leads to an improved stamp life time compared to the use of common imprint resists. The complete process flow is demonstrated for a wire grid polarizer (WGP) with 200nm period and a structure height of 100nm. Display Omitted Successful integration of the novel organic imprint resist mr-NIL210 in the SCIL processDemonstration of a simplified UV-NIL metal structuring process due to organic resist formulationHigh resolution suitability demonstrated based on a 100nm half-pitch wire grid polarizer on quartz