Modified Self-Scattering Procedure for Monte-Carlo Simulation of Hot Electrons

The generalization of the self-scattering procedure of the electron trajectory simulation in semiconductors for the arbitrary scattering rates w(p, p′) from the state with momentum p to p′ is suggested. In the method proposed instead of the total scattering rate per unit time v (p) = fw(p, p′) d3p′ the random function ξ(p) with the average value 〈ξ(p)〉 = v(p) is introduced. Such simulation procedure corresponds to the calculation of v(p) along the simulated trajectory by means of the Monte-Carlo method. The comparison of the commonly employed self-scattering procedure with the suggested one is performed.