[011] waveguide stripe direction n-i-p-n heterostructure InP optical modulator

A new n-i-p-n heterostructure InP(100) optical modulator is proposed. By utilising the crystallographic orientation dependence of the electro-optic Pockels effect and electric field direction, the device, which is formed along the [011] waveguide stripe direction, has a lower half-wave voltage than one formed along the [011] direction. The half-wave voltage of a [011] direction phase modulator was 4.8 V, whereas that of the [011] direction was 2.9 V.