Synaptic transistors based on transparent oxide for neural image recognition

Artificial synaptic devices are the critical component for large-scale neuromorphic computing, which surpasses the limitations of von Neumann’s structure. Recently the emerging electrolytic gated transistor (EGT) has proven to be a promising neuromorphic application due to the conductance can be updated by the gate voltage stimulation. This paper presents a new low-temperature solution-based oxide thin film transistor, which uses an ion-doped dielectric layer. The suitable ion doping concentration is obtained by the synaptic electrical characteristic. The synaptic transistor also has a low-noise linear conductance update and a relatively high G max /G min ratio.