Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic Regimes

Nanoscale trigate FinFET with channel lengths down to 9.7 nm as projected by the 2013 International Technology Roadmap of Semiconductors (ITRS-2013) are simulated by means of quantum corrected 3-D Monte Carlo technique in the ballistic and quasi-ballistic regimes. Ballisticity ratio (BR) is extracted and found to reach values as high as 90% at $L_{G}=9.7$ nm. The impact of the ITRS-2013 scaling strategy on the BR, and ON-/OFF-states is discussed. Forward and backward electron velocity components are extracted along the channel to analyze the electron transport in detail. Velocity profile is found to be characterized by two critical points along the channel, each is associated with a change in the electron acceleration showing the physical significance of the off-equilibrium transport with scaling the channel length.