Characterization and integration of new porous low-k dielectric (k<2.3) for 65 nm technology and beyond

Abstract In this paper, new porous spin-on dielectric (HL02™, trademark of the LG Ltd.) was studied. The characterizations, such as thermal stability, chemical structure, dielectric constant ( k ) and mechanical properties (hardness and modulus), of methylsilsesquioxane (MSQ)-based dielectrics were evaluated. An optimized material ( k  = 2.25), characterized by a hardness and a modulus of 1.0 GPa and 6.5 GPa each in association with a porosity of 30% and a mean pore radius of 2.2 nm, was successfully integrated in damascene process with 10 levels of Cu/low- k film for 65 nm technology and beyond. Good electrical results were obtained in metal line resistance and leakage current.