Crystallization of amorphous hydrogenated silicon (a-Si:H) films under irradiation with femtosecond laser pulses

Crystallization of thin films of amorphous hydrogenated silicon under the irradiation of femtosecond laser pulses has been studied. It was found that the crystallization has a clearly pronounced threshold nature and depends on the laser emission wavelength. As shown the best results are achieved in crystallization at the laser wavelength range of 740–760 nm.