Old Web
English
Sign In
Acemap
>
Paper
>
Influence of fin width and gate structure on the performance of AlGaN/GaN fin-shaped HEMTs
Influence of fin width and gate structure on the performance of AlGaN/GaN fin-shaped HEMTs
2019
Meng Zhang
Xiaohua Ma
Minhan Mi
Ling Yang
Sheng Wu
Bin Hou
Qing Zhu
Hengshuang Zhang
Mei Wu
Yue Hao
Keywords:
Electronic engineering
Fin
Engineering physics
AND gate
Mathematics
algan gan
Extremely high frequency
dual gate
fin width
Optoelectronics
Correction
Source
Cite
Save
Machine Reading By IdeaReader
23
References
3
Citations
NaN
KQI
[]