High resolution transmission electron microscopy of proton‐implanted gallium arsenide

High resolution transmission electron microscopy has been performed on cross‐sectional specimens from high dose (1016 cm−2) H+‐implanted (100) n‐GaAs (300 keV at room temperature). It was found that annealing at 500 °C created small (20–50 A) loops on {111} planes near the projected range Rp (3.2 μm). At 550–600 °C, voids surrounded by stacking faults, microtwins, and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.