Novel array LED high-voltage chip and manufacturing method thereof

The invention relates to a novel array LED high-voltage chip. The novel array LED high-voltage chip comprises a substrate, an N-type GaN limiting layer, a quantum well and a P-type GaN limiting layer. The N-type GaN limiting layer, the quantum well and the P-type GaN limiting layer on the substrate are partitioned into a plurality of square units arranged in an array. Each square unit comprises at least one circular light-emitting element and a plurality of triangular light-emitting elements surrounding the corresponding circular light-emitting element. The circular light-emitting elements are connected with the corresponding triangular light-emitting elements in series or in parallel. More light-emitting units are manufactured in the same light-emitting area through the integrated design scheme, and the overall layout is reasonable and can be more suitable for the structure of the high-voltage chip.