First-principles modeling of double-gate UTSOI MOSFETs

This paper presents a first-principles approach to modeling wavefunction penetration and transport in UTSOI MOSFETs that includes accurate quantum mechanics and atomic-scale structures with no empirical parameters. Applications to interface roughness and to Hf atoms near the Si-SiO 2 /HfO 2 interface in double-gate UTSOI MOSFETs with SiO 2 or HfO 2 gate dielectrics are presented