Use of ultrasound for metal cluster engineering in ion implanted silicon oxide

2007 
This letter presents an approach to metal cluster engineering in silicon oxide that uses ultrasound vibration applied in situ during implantation. Analysis by transmission electron microscopy has demonstrated that in situ applied acoustic vibrations result in a lowering of the clustering threshold and an increase in cluster size after subsequent annealing. The results are interpreted in terms of the interaction between ultrasonic vibrations and point defects leading to the formation of vacancy-rich regions, as determined by deuterium decoration method. The excess of vacancies in the precipitation region facilitates nucleation and stimulates cluster growth due to enhanced diffusion of metal species.
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