Electrophysical diagnostics of Ag/HfO 2 /ZnO/TiAu structures

This paper reports on the Ag/HfO 2 /ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO 2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO 2 capping layer for the ZnO-based diode was found to be about 2.5 nm.