Shallow quantum well EAM-LD with short hole lifetime for high-power and long-reach 10Gbps transmitters

Hole lifetime in electroabsorption modulator integrated laser diode (EAM-LD) has been reduced to 7ps by employing a shallow quantum well (QW) absorption layer. 10Gbps-80km SMF transmission has been achieved at +5.3dBm fiber launched power.