Dopant effect on threshold electric field of antiferroelectric liquid crystal switching

Abstract The influence of dopants on the threshold electric field for switching anti-ferroelectric liquid crystals was determined from the optical response curve obtained by using a triangular wave. The effect of dopant concentration on the transition temperatures of the mixtures with a host material was also investigated. The threshold electric field was diminished depending on (i) the chemical structure of the additive and (ii) increasing amounts of the additive. The upper limits of the temperature region of the S*C A phases also decreased with increasing amount of additive, and these phases disappeared at 40 mol% of additive in all cases. Compound (C) is the most effective with respect to the threshold electric field. It is a two ring compound and has a chiral part similar to that of the host antiferroelectric liquid crystal compound.