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Annealing study of main electron irradiation-induced defects (H4 and H5) in P-InP using DLTS technique
Annealing study of main electron irradiation-induced defects (H4 and H5) in P-InP using DLTS technique
1992
B. Massarani
Fahed H. Awad
M. Kaaka
Keywords:
Annealing (metallurgy)
Analytical chemistry
Radiation effect
Optoelectronics
Indium phosphide
Phase detector
Schottky diode
Materials science
Electron beam processing
Correction
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