A High-resolution, Wide-range, Radiation-hard Clock Phase-shifter in a 65 nm CMOS Technology

The design and characterization results of a high-resolution phase-shifter are presented. The phase-shifter is designed with radiation hardening techniques and fabricated in 65 nm CMOS technology. The phase-shifter circuit can produce several output frequencies (40, 80, 160, 320, 640 or 1280 MHz) with an adjustable phase (48.4 ps resolution). It has been fully characterized displaying INL<0.61 LSB and DNL<0.44 LSB with the power consumption, depending on the output frequency, staying below 8 μW/MHz.