PARAMETERS EXTRACTION FOR HEMT SMALL-SIGNAL EQUIVALENT-CIRCUIT

A HEMT small-signal equivalent-circuit model is introduced in this paper. Considering the difference between HEMT and MESFET, a method of extracting series-resistance, parasitic inductance, parasitic capacitance and intrinsic element parameters for HEMT small-signal equivalent-circuit is described. Using these methods, the S parameter for HEMT in 32-39GHz range is extracted. Experimental results indicate that this method is simple and feasible.