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Reduction of NiGe/ n Ge Schottky Barrier Height by S and P Co-introduction for Metal Source/Drain in Ge n MOSFETs
Reduction of NiGe/ n Ge Schottky Barrier Height by S and P Co-introduction for Metal Source/Drain in Ge n MOSFETs
2011
Mitsuo Koike
Yuuichi Kamimuta
Tsutomu Tezuka
Keywords:
Nanotechnology
Schottky barrier
Condensed matter physics
Metal
Materials science
Optoelectronics
Correction
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