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Acemap > Paper > The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells

The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells

2002 
The influence of Si-donor doping on the exciton localization in modulation- doped GaN/AlGaN multi quantum wells
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