Fabrication and Electrical Characterization of Lambda DNA Field Effect Transistors

We report fabrication and characterization of lambda DNA field effect transistors. Our transistor is basically a DNA network formed in between the source and the drain electrode on a SiO2/Si substrate. Measured source‐drain current (ISD) as a function of the source‐drain bias shows nonlinear characteristics. Such non‐linearity is typically a manifestation of the semiconducting behavior and is believed to be caused by the energy gap of the DNA molecules. Our sample shows a field effect behavior and we observe that ISD increases as the gate bias becomes more negative. It suggests that the lambda DNA used in our experiment is a p‐type molecule.