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Acemap > Paper > (Invited) Microstructure Development in Epitaxially Grown In Situ Boron and Carbon Co-Doped Strained 60% Silicon-Germanium Layers

(Invited) Microstructure Development in Epitaxially Grown In Situ Boron and Carbon Co-Doped Strained 60% Silicon-Germanium Layers

2013 
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